Results
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WP1 Plasma chemical etching for c-Si photovoltaics
WP3 Structuring of TCO layers for TF-Photovoltaics
WP5 Infection control: Process and Materials studies
WP7 Energy storage – Process and materials R&D
WP9 Interface technologies for durable adhesion
WP11 Cross-cutting equipment development
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Plasma chemical etching for c-Si photovoltaics
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- R&D of novel atmospheric pressure plasma chemical etching (AP-PCE) for application in silicon solar wafer processing
- target: increased photovoltaic cell performance by introducing tailored micro- and nano-structured morphology of both front and rear surface
- adjusting of top pyramid angle of c-Si by variation of gas composition
- increase of internal reflectivity of cell structure from 65-70% for standard screen-printed Al to > 90%
Atmospheric pressure plasma chemical etching of silicon
- test of alternative etching gases with low global warming potential (GWP)
- in-situ process characterization by OES and FTIR spectroscopy investigation of atmospheric pressure microwave plasma for silicon etching
- optical modelling of solar cell and application oriented tests
Conclusion
- atmospheric pressure plasma chemical etching: very useful technique to modify the rear surface morphology of Si solar cells
- combined nano-micro structure substantially increases light harvesting: efficiencies up to 17.2 % achieved for PV cell structures with conventional Al BSF
c-Si photovoltaic demonstrator
- design and construction of equipment demonstrator to explore industrial feasibility of technologies being developed for plasma chemical etching of silicon
- introducing advanced 3D surface structuring techniques and control of nano-roughness, pinches, and radius of curvatures
- cost reduction for crystalline silicon solar cell manufacturing by combining process steps, substantial decrease of wafer break rate for thinner silicon wafers (<150 µm), and increased wafer throughput rate
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